. Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process . Using new Diode which is designed to get soft reverse recovery characteristics. . Keeping the package compatibility. The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM. . Monolithic gate drive & protection logic . Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage (P-Fo available from upper leg devices) . Acoustic noise-less 3.7kW class inverter application
PM50CSD060 .PDF
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