Features : p>
.  High-Power Switching Applications Fourth Generation IGBT .  FRD included between emitter and collector .  Enhancement mode type .  High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A) FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs) .  Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)
GT60N321 .PDF
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