FEATURE:

.  Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process
.  Using new Diode which is designed to get soft reverse recovery characteristics.
.  Keeping the package compatibility.
The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.
.  Monolithic gate drive & protection logic
.  Detection, protection & status indication circuits for overcurrent,
short-circuit, over-temperature & under-voltage (P-Fo available from upper leg devices)
.  Acoustic noise-less 3.7kW class inverter application